Role of the Aerosol Phase State in Ammonia/Amines Exchange ReactionsCHAN, Lap P; CHAN, Chak K.Environmental science & technology. 2013, Vol 47, Num 11, pp 5755-5762, issn 0013-936X, 8 p.Article

Roles of the Phase State and Water Content in Ozonolysis of Internal Mixtures of Maleic Acid and Ammonium Sulfate ParticlesCHAN, Lap P; CHAN, Chak K.Aerosol science and technology (Print). 2012, Vol 46, Num 7, pp 781-793, issn 0278-6826, 13 p.Article

Dynamic NBTI lifetime model for inverter-like waveformSHYUE SENG TAN; TU PEI CHEN; CHAN, Lap et al.Microelectronics and reliability. 2005, Vol 45, Num 7-8, pp 1115-1118, issn 0026-2714, 4 p.Article

Displacement of Ammonium from Aerosol Particles by Uptake of TriethylamineCHAN, Lap P; CHAN, Chak K.Aerosol science and technology (Print). 2012, Vol 46, Num 2, pp 236-247, issn 0278-6826, 12 p.Article

Growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(111) studied by STM and DFTHONG CHAN, Lap; HAYAZAKI, Shinji; OGAWA, Kokushi et al.Applied surface science. 2013, Vol 265, pp 291-295, issn 0169-4332, 5 p.Article

Cadaveric Study of Zone 2 Flexor Hallucis Longus Tendon SheathTUN HING LUI; CHAN, Kwok Bill; CHAN, Lap Ki et al.Arthroscopy (Print). 2010, Vol 26, Num 6, pp 808-812, issn 0749-8063, 5 p.Article

A New Impact-Ionization Current Model Applicable to Both Bulk and SOI MOSFETs by Considering Self-Lattice-HeatingCHENGQING WEI; GUAN HUEI SEE; XING ZHOU et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 9, pp 2378-2385, issn 0018-9383, 8 p.Article

Gas—Particle Partitioning of Alcohol Vapors on Organic AerosolsCHAN, Lap P; LEE, Alex K. Y; CHAN, Chak K et al.Environmental science & technology. 2010, Vol 44, Num 1, pp 257-262, issn 0013-936X, 6 p.Article

Selenium Segregation for Lowering the Contact Resistance in Ultrathin-Body MOSFETs With Fully Metallized Source/DrainWONG, Hoong-Shing; CHAN, Lap; SAMUDRA, Ganesh et al.IEEE electron device letters. 2009, Vol 30, Num 10, pp 1087-1089, issn 0741-3106, 3 p.Article

Improvement of Negative Bias Temperature Instability by Stress Proximity TechniqueJIAN BO YANG; CHEN, T. P; YING GONG et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 1, pp 238-243, issn 0018-9383, 6 p.Article

Charge-induced conductance modulation of carbon nanotube field effect transistor memory devicesMEI YIN CHAN; LI WEI; YUAN CHEN et al.Carbon (New York, NY). 2009, Vol 47, Num 13, pp 3063-3070, issn 0008-6223, 8 p.Article

Silicon-Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel TransistorsWONG, Hoong-Shing; ANG, Kah-Wee; SAMUDRA, Ganesh et al.IEEE electron device letters. 2008, Vol 29, Num 5, pp 460-463, issn 0741-3106, 4 p.Article

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperatureCHAN, H. Y; SRINIVASAN, M. P; BENISTANT, F et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 269-273, issn 0040-6090, 5 p.Conference Paper

SDODEL MOSFET for performance enhancementKING JIEN CHUI; SAMUDRA, Ganesh S; YEO, Yee-Chia et al.IEEE electron device letters. 2005, Vol 26, Num 3, pp 205-207, issn 0741-3106, 3 p.Article

Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistorsONG, S. Y; CHOR, E. F; LEE, James et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 8, pp G485-G489, issn 0013-4651Article

Simulation and design of a germanium L-shaped impact-ionization MOS transistorTOH, Eng-Huat; GRACE HUIQI WANG; CHAN, Lap et al.Semiconductor science and technology. 2008, Vol 23, Num 1, issn 0268-1242, 015012.1-015012.6Article

High Self-Resonant and Area Efficient Monolithic Transformer Using Novel Intercoil-Crossing Structure for Silicon RFICLIM, Chee-Chong; YEO, Kiat-Seng; CHEW, Kok-Wai et al.IEEE electron device letters. 2008, Vol 29, Num 12, pp 1376-1379, issn 0741-3106, 4 p.Article

Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization regionTOH, Eng-Huat; WANG, Grace Huiqi; CHAN, Lap et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 10, pp 2778-2785, issn 0018-9383, 8 p.Article

I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineeringTOH, Eng-Huat; HUIQI WANG, Grace; CHAN, Lap et al.IEEE electron device letters. 2006, Vol 27, Num 12, pp 975-977, issn 0741-3106, 3 p.Article

A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device PerformanceTOH, Eng-Huat; WANG, Grace Huiqi; CHAN, Lap et al.IEEE electron device letters. 2008, Vol 29, Num 2, pp 189-191, issn 0741-3106, 3 p.Article

Cointegration of In Situ Doped Silicon-Carbon Source and Silicon-Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization TransistorTOH, Eng-Huat; WANG, Grace Huiqi; CHAN, Lap et al.IEEE electron device letters. 2008, Vol 29, Num 7, pp 731-733, issn 0741-3106, 3 p.Article

Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline siliconCHAN, H. Y; NORDLUND, K; CHAN, Lap et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 121-125, issn 0040-6090, 5 p.Conference Paper

Electrical evaluation of laser annealed junctions by Hall measurementsCHYIU HYIA POON; LENG SEOW TAN; BYUNG JIN CHO et al.Thin solid films. 2004, Vol 462-63, pp 72-75, issn 0040-6090, 4 p.Conference Paper

Brief geriatric depression scale as a measure of change in level of depressionCHENG, Sheung-Tak; YU, Edwin C. S; CHAN, Lap Kei et al.International journal of geriatric psychiatry. 2013, Vol 28, Num 11, issn 0885-6230, p. 1207Article

Technical note : Out-of-plane angular correction based on a trigonometric function for use in two-dimensional kinematic studiesSTEVENS, Nancy J; SCHMITT, Daniel O; COLE, Theodore M et al.American journal of physical anthropology. 2006, Vol 129, Num 3, pp 399-402, issn 0002-9483, 4 p.Article